| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus for producing a semiconductor thin film in which utilization efficiency of raw material is enhanced while maintaining in-plane uniformity of a substrate, and production cost of semiconductor is reduced, and to provide a method of producing a nitride semiconductor. <P>SOLUTION: When the wall surface of a reactor facing a sapphire substrate 7 is controlled to a temperature of 500-700K (more preferably, 550-650K) by a temperature characteristics adjustment mechanism 40, characteristics of GaN growth rate for the distance from the upstream of a substrate is the closest to linearity, and in-plane uniformity of a substrate can be maintained. Utilization efficiency of raw material is as high as 37.5% in this range. In a raw material reaction region A, warm air from below is conditioned by the temperature characteristics adjustment mechanism 40 and gas flow in the raw material reaction region A is made stable and uniform. As a result, utilization efficiency of raw material can be enhanced while maintaining in-plane uniformity of the substrate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
