METHOD FOR MANUFACTURING SEMICONDUCTOR LASER ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor laser element capable of accurately recognizing an alignment mark during a formation of a waveguide structure.

SOLUTION: The method for manufacturing the semiconductor laser element comprises: a step for forming an alignment mark 15 as recess portions 15a; a step for forming a diffraction grating 13a on a diffraction grating layer 13; a step for growing a clad layer 17 to embed the diffraction grating layer 13 and the alignment mark 15; a step for removing a part of the clad layer 17 formed on the alignment mark 15; and a step for forming a mesa-stripe structure 20 including the diffraction grating 13a on an element formation region 10b by using the alignment mark 15 serving as a positioning reference. Arsine and phosphine are supplied to a chamber in which a semiconductor substrate 10 is placed in growing the clad layer 17 before the clad layer 17 grows to substitute a part of P on a surface layer of inside of the alignment mark 15 with As and to reform the surface layer into a layer including InAsP.

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