| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent leakage current between a gate pad electrode and a backside metal electrode, to improve bonding strength, and to achieve high performance and high reliability. <P>SOLUTION: A semiconductor device 1 comprises: a gate electrode 24, a source electrode 20, and a drain electrode 22 each having a plurality of fingers, and an ohmic electrode layer 18 that are disposed on a first surface of a substrate 10; gate terminal electrodes GE1 to GE4, source terminal electrodes SE1 to SE4, and a drain terminal electrode DE that are each formed so as to bring together a plurality of fingers per the gate electrode, the source electrode, and the drain electrode; a gate pad electrode 30 that is disposed on the ohmic electrode layer and is connected to the gate terminal electrodes; a first-conductive-type semiconductor layer 16 formed in the substrate so as to cover a reaction layer formed on the interface between the ohmic electrode layer and the substrate; and a second-conductive-type semiconductor layer that is formed in the substrate so as to cover the first-conductive-type semiconductor layer 16 and has a conductive type opposite to a first conductive type. <P>COPYRIGHT: (C)2012,JPO&INPIT |
