| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize a low-current rewrite operation during high-speed operation, and suppress memory-cell unevenness and read disturb, in a memory based on spin-transfer magnetization switching. <P>SOLUTION: A rewriting current is reduced by destabilizing a spin state by giving a weak pulse before rewriting. Disturb is suppressed by reading in a region where the rewriting current is nonlinearly increased by the pulse width. Furthermore, unevenness is suppressed by a driving method which makes the transferred spin amount constant by bit-line electric charges. <P>COPYRIGHT: (C)2012,JPO&INPIT |
