| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of reducing an influence on a non-selected cell caused by writing to a selected cell. <P>SOLUTION: By controlling voltage applied to a word line, first, third and fourth switching circuits are turned on with first and second selection transistors turned off to perform conduction between a first signal terminal and one end of a first bit line, between a third signal terminal and one end of a second bit line, and between a fourth signal terminal and one end of a third bit line, and a second switching circuit is turned off to perform disconnection between a second signal terminal and the other end of the second bit line. Further, a first writing circuit applies first voltage to the first signal terminal, a second writing circuit applies second voltage different from the first voltage to the third signal terminal and also applies third voltage different from the first voltage to the fourth signal terminal. After that, disconnection is performed between the fourth signal terminal and the other end of the third bit line, and the first and second selection transistors are turned on. <P>COPYRIGHT: (C)2012,JPO&INPIT |
