NANOWIRE-BASED OPTOELECTRONIC DEVICE FOR LIGHT EMISSION

摘要

The invention relates to an optoelectronic device comprising: an active semiconductor zone (84) for the radiative recombination of electron-hole pairs, taking the form of at least one nanowire made from unintentially doped semiconductor material; a semiconductor zone (88) for injecting holes radially into each nanowire, made from a doped semiconductor material having a first type of conductivity and a band gap smaller than that of the nanowire material; and a semiconductor zone (82) for injecting electrons axially into each nanowire, made from a doped semiconductor material of a second conductivity type opposite the first conductivity type.