STRESS-ADJUSTING METHOD OF MOS DEVICE

摘要

A stress-adjusting method for use in a manufacturing system of a MOS device is provided. At first, a first stress layer is formed onto a substrate wherein at least two MOSFETs are previously formed on the substrate. The first stress layer overlies an inter-gate region between two adjacent gate regions of the MOSFETs and overlies the two adjacent gate regions. Then, the first stress layer in the inter-gate region is thinned. A second stress layer is further formed onto the substrate to overlie the thinned first stress layer in the inter-gate region to provide the resulting MOS device with satisfactory stress.