发明名称 |
CHEMICAL MECHANICAL POLISHING OF SILICON CARBIDE COMPRISING SURFACES |
摘要 |
Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness ≦̸6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of the silicon carbide surface is removed. |
申请公布号 |
US2012070991(A1) |
申请公布日期 |
2012.03.22 |
申请号 |
US201113305479 |
申请日期 |
2011.11.28 |
申请人 |
SINGH RAJIV K.;ARJUNAN ARUL CHAKKARAVARTHI;DAS DIBAKAR;SINGH DEEPIKA;MISHRA ABHUDAYA;JAYARAMAN TANJORE V.;UNIVERSITY OF FLORIDA RESEARCH FOUNDATION INC.;SINMAT, INC. |
发明人 |
SINGH RAJIV K.;ARJUNAN ARUL CHAKKARAVARTHI;DAS DIBAKAR;SINGH DEEPIKA;MISHRA ABHUDAYA;JAYARAMAN TANJORE V. |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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