ORGANIC SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SAME, ORGANIC TRANSISTOR ARRAY, AND DISPLAY

摘要

This disclosure provides an organic semiconductor device including: a substrate; a source electrode and a drain electrode which are formed on the substrate; an insulation partitioned part which is formed on the source electrode and the drain electrode, formed such that an opening part of the insulation partitioned part is disposed above a channel region formed by the source electrode and the drain electrode; an organic semiconductor layer which is formed in the opening part of the insulation partitioned part and on the source electrode and the drain electrode; a gate insulation layer which is formed on the organic semiconductor layer and made of an insulation resin material; and a gate electrode formed on the gate insulation layer, and the insulation partitioned part has a height ranging from 0.1 μm to 1.5 μm.