| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconducting crystal with high resistance, which can used for an electronic device requiring precise control of resistance even in the case where the semiconducting crystal contains a Si atom or an O atom in a crystal such as a nitride semiconductor crystal grown selectively and epitaxially by using an inhibition layer. <P>SOLUTION: There is provided a semiconductor substrate which includes a base substrate and a first crystal layer formed on or above the base substrate, where the first crystal layer is a 3-5 group compound semiconductor layer containing a first atom which is at least one atom selected from a group made up of an oxygen atom and a silicon atom, and a second atom which is at least one atom functioning as an acceptor. The semiconductor substrate may further have an inhibition layer formed on or above the base substrate. The inhibition layer has an opening, inhibits crystal growth, and contains the first atom, and the first crystal layer is formed in the opening. <P>COPYRIGHT: (C)2012,JPO&INPIT |
