| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a projection exposure system especially for microlithography which can obtain a highly accurate image by the light of the extreme ultraviolet (EUV) region. <P>SOLUTION: A projection exposure system which is especially for microlithography, comprises: a light source (18) for generating light in the EUV region; a first optical systems (19, 20, 21, 22, 23, and 24) for illuminating a mask (25) by the light of the light source (18); second optical systems (26, 27, 28, 29, 30, and 31) for forming an image of the mask (25) on a member (32). At least one polarization optical element (1) is positioned in a beam path between the light source (18) and the member (32). <P>COPYRIGHT: (C)2012,JPO&INPIT |
