发明名称 |
SELF-ALIGNED STRAP FOR EMBEDDED CAPACITOR AND REPLACEMENT GATE DEVICES |
摘要 |
After forming a planarization dielectric layer in a replacement gate integration scheme, disposable gate structures are removed and a stack of a gate dielectric layer and a gate electrode layer is formed within recessed gate regions. Each gate electrode structure is then recessed below a topmost surface of the gate dielectric layer. A dielectric metal oxide portion is formed above each gate electrode by planarization. The dielectric metal oxide portions and gate spacers are employed as a self-aligning etch mask in combination with a patterned photoresist to expose and metalize semiconductor surfaces of a source region and an inner electrode in each embedded memory cell structure. The metalized semiconductor portions form metal semiconductor alloy straps that provide a conductive path between the inner electrode of a capacitor and the source of an access transistor.
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申请公布号 |
US2012068237(A1) |
申请公布日期 |
2012.03.22 |
申请号 |
US20100886224 |
申请日期 |
2010.09.20 |
申请人 |
BOOTH, JR. ROGER A.;CHENG KANGGUO;ERVIN JOSEPH;PEI CHENGWEN;WANG GENG;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOOTH, JR. ROGER A.;CHENG KANGGUO;ERVIN JOSEPH;PEI CHENGWEN;WANG GENG |
分类号 |
H01L27/108;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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