| 摘要 |
According to one embodiment, a nonvolatile semiconductor memory includes a memory cell array with a block including word lines, and each word line connected to memory cells, a controller which controls a data erase of the memory cells in the block, and a verify circuit which verifies whether or not the data erase is completed. The controller comprises being executed a verification by the verify circuit after being executed a first block erase in a predetermined condition, being executed a second block erase continuously when the number of memory cells which are judged by the verification as a completion of the data erase is n (n is a natural number) or less, and being executed a page erase continuously when the number of memory cells which are judged by the verification as a completion of the data erase is more than n.
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