摘要 |
An integrated platform for processing substrates, comprising: a vacuum substrate transfer chamber; a doping chamber coupled to the vacuum substrate transfer chamber, the doping chamber configured to implant or deposit dopant elements in or on a surface of a substrate; a dopant activation chamber coupled to the vacuum substrate transfer chamber, the dopant activation chamber configured to anneal the substrate and activate the dopant elements; and a controller configured to control the integrated platform, the controller comprising a computer readable media having instructions stored thereon that, when executed by the controller, causes the integrated platform to perform a method, the method comprising: doping a substrate with one or more dopant elements in the doping chamber; transferring the substrate under vacuum to the dopant activation chamber; and annealing the substrate in the dopant activation chamber to activate the dopant elements. |
申请人 |
APPLIED MATERIALS, INC.;SANTHANAM, KARTIK;HILKENE, MARTIN A.;SCOTNEY-CASTLE, MATTHEW D.;PORSHNEV, PETER I.;SRINIVASAN, SWAMINATHAN;RAMAMURTHY, SUNDAR |
发明人 |
SANTHANAM, KARTIK;HILKENE, MARTIN A.;SCOTNEY-CASTLE, MATTHEW D.;PORSHNEV, PETER I.;SRINIVASAN, SWAMINATHAN;RAMAMURTHY, SUNDAR |