发明名称 INTEGRATED PLATFORM FOR IN-SITU DOPING AND ACTIVATION OF SUBSTRATES
摘要 An integrated platform for processing substrates, comprising: a vacuum substrate transfer chamber; a doping chamber coupled to the vacuum substrate transfer chamber, the doping chamber configured to implant or deposit dopant elements in or on a surface of a substrate; a dopant activation chamber coupled to the vacuum substrate transfer chamber, the dopant activation chamber configured to anneal the substrate and activate the dopant elements; and a controller configured to control the integrated platform, the controller comprising a computer readable media having instructions stored thereon that, when executed by the controller, causes the integrated platform to perform a method, the method comprising: doping a substrate with one or more dopant elements in the doping chamber; transferring the substrate under vacuum to the dopant activation chamber; and annealing the substrate in the dopant activation chamber to activate the dopant elements.
申请公布号 WO2012036963(A2) 申请公布日期 2012.03.22
申请号 WO2011US50759 申请日期 2011.09.08
申请人 APPLIED MATERIALS, INC.;SANTHANAM, KARTIK;HILKENE, MARTIN A.;SCOTNEY-CASTLE, MATTHEW D.;PORSHNEV, PETER I.;SRINIVASAN, SWAMINATHAN;RAMAMURTHY, SUNDAR 发明人 SANTHANAM, KARTIK;HILKENE, MARTIN A.;SCOTNEY-CASTLE, MATTHEW D.;PORSHNEV, PETER I.;SRINIVASAN, SWAMINATHAN;RAMAMURTHY, SUNDAR
分类号 H01L21/265;H01L21/22 主分类号 H01L21/265
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