METHOD OF FORMING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a semiconductor device is provided to re-crystallize amorphous silicon areas of damaged areas, thereby enhancing electrical features. CONSTITUTION: A second insulation layer(44) is formed on a first polycrystalline silicon layer. A second polycrystalline silicon layer is formed on the second insulation layer. A second polycrystalline silicon pattern exposes a surface of the second insulation layer. A first amorphous area is formed on a side of the second polycrystalline silicon pattern. The second oxide exposing the surface of the first polycrystalline silicon layer is formed. A first polycrystalline silicon pattern exposes a surface of the first insulation layer. The exposed first insulation layer is eliminated to form a first insulation pattern which exposes a surface of a semiconductor substrate.