TUNNEL DIODES MADE OF STRESS-COMPENSATED COMPOUND SEMICONDUCTOR LAYERS

摘要

The component has a tunnel diode arranged between two semiconductor layers. The tunnel diode comprises a degenerated N-conducting layer (3) and a degenerated P-conducting layer (4). The layers exhibit a thickness that ranges between 10 to 100 nanometer, where grating constant of materials of the degenerated n-conducting layers exhibit a difference of 0.5 percentages. Grating constant of the layers corresponds to grating constant of materials of the semi-conductor layers. The p-conducting layer is doped with carbon, and the n-conducting layer is doped with tellurium, silicon and germanium.