Method of manufacturing a backside illumination solid imaging device

摘要

A wafer (10) for backside illumination type solid imaging device (100) has a plurality of pixels inclusive of a photoelectric conversion device (501) and a charge transfer transistor (60) at its front surface side and a light receiving surface (20a) at its back surface side, wherein said wafer (10) is a SOI wafer obtained by forming a given active layer (40) on a support substrate (20) made of C-containing p-type semiconductor material through an insulating layer (30).