发明名称 |
III-V HEMT DEVICES |
摘要 |
<p>A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×1017 cm−3. Semiconductor devices including III-V semiconductors may have a stable normally-off operation.</p> |
申请公布号 |
EP1779438(B8) |
申请公布日期 |
2012.03.21 |
申请号 |
EP20050755884 |
申请日期 |
2005.06.22 |
申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
SUGIMOTO, MASAHIRO;KACHI, TETSU;NAKANO, YOSHITAKA;UESUGI, TSUTOMU;UEDA, HIROYUKI;SOEJIMA, NARUMASA |
分类号 |
H01L29/778;H01L21/335;H01L29/20 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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