发明名称 |
INSULATING GATE TYPE BIPOLAR TRANSISTOR |
摘要 |
An IGBT (100), which is a vertical type IGBT allowing for reduced on-resistance while restraining defects from being produced, includes: a silicon carbide substrate (1), a drift layer (3), a well region (4), an n + region (5), an emitter contact electrode (92), a gate oxide film (91), a gate electrode (93), and a collector electrode (96). The silicon carbide substrate (1) includes: a base layer (10) made of silicon carbide and having p type conductivity; and a SiC layer (20) made of single-crystal silicon carbide and disposed on the base layer (10). The base layer (10) has a p type impurity concentration exceeding 1 × 10 18 cm -3 .
|
申请公布号 |
EP2432022(A1) |
申请公布日期 |
2012.03.21 |
申请号 |
EP20100774831 |
申请日期 |
2010.04.27 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
WADA, KEIJI;HARADA, SHIN;MASUDA, TAKEYOSHI;HONAGA, MISAKO;NISHIGUCHI, TARO;SASAKI, MAKOTO;FUJIWARA, SHINSUKE;NAMIKAWA, YASUO |
分类号 |
H01L29/739;H01L21/02;H01L21/20;H01L21/336;H01L29/12;H01L29/78 |
主分类号 |
H01L29/739 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|