发明名称 |
Method for manufacturing an organic thin fim transistor using a nano-crystalline diamond film |
摘要 |
<p>A nano-crystal diamond film synthesized on a substrate and containing, as a major component, nano-crystal diamond having a grain diameter from 1 nm to less than 1000 nm. This nano-crystal diamond film can be formed on a substrate by means of a plasma CVD method using a raw material gas containing a hydrocarbon and hydrogen, allowing the formation of the nano-crystal diamond film to take place outside the plasma region. This nano-crystal diamond film is applicable to the manufacture of an organic thin film transistor.</p> |
申请公布号 |
EP2431504(A1) |
申请公布日期 |
2012.03.21 |
申请号 |
EP20110193484 |
申请日期 |
2004.05.27 |
申请人 |
TOPPAN PRINTING CO., LTD.;NATIONAL INSTITUTE FOR MATERIALS SCIENCE |
发明人 |
GAMO, HIDENORI;ANDO, TOSHIHIRO |
分类号 |
C30B29/04;C23C16/27;C30B25/02;C30B25/10;C30B29/60;H01L21/02;H01L29/16 |
主分类号 |
C30B29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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