发明名称 Method for manufacturing an organic thin fim transistor using a nano-crystalline diamond film
摘要 <p>A nano-crystal diamond film synthesized on a substrate and containing, as a major component, nano-crystal diamond having a grain diameter from 1 nm to less than 1000 nm. This nano-crystal diamond film can be formed on a substrate by means of a plasma CVD method using a raw material gas containing a hydrocarbon and hydrogen, allowing the formation of the nano-crystal diamond film to take place outside the plasma region. This nano-crystal diamond film is applicable to the manufacture of an organic thin film transistor.</p>
申请公布号 EP2431504(A1) 申请公布日期 2012.03.21
申请号 EP20110193484 申请日期 2004.05.27
申请人 TOPPAN PRINTING CO., LTD.;NATIONAL INSTITUTE FOR MATERIALS SCIENCE 发明人 GAMO, HIDENORI;ANDO, TOSHIHIRO
分类号 C30B29/04;C23C16/27;C30B25/02;C30B25/10;C30B29/60;H01L21/02;H01L29/16 主分类号 C30B29/04
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