发明名称 LASER ANNEALING METHOD AND LASER ANNEALING APPARATUS
摘要 In the present invention, At least one row of lens arrays, in which a plurality of lenses are arranged in a direction intersecting with the conveying direction of a substrate to correspond to the plurality of TFT forming areas set in a matrix on the substrate, is shifted in the direction intersecting with the conveying direction of the substrate, to thereby align the lenses in the lens array with the TFT forming areas on the substrate based on the alignment reference position. The laser beams are irradiated onto the lens array when the substrate moves and the TFT forming areas reach the underneath of the corresponding lenses of the lens array, and the laser beams are focused by the plurality of lenses to anneal the amorphous silicon film in each TFT forming area.
申请公布号 KR20120027243(A) 申请公布日期 2012.03.21
申请号 KR20117027330 申请日期 2010.05.25
申请人 V TECHNOLOGY CO., LTD. 发明人 KAJIYAMA KOICHI;MIZUMURA MICHINOBU
分类号 H01L21/268;H01L21/324;H01L29/786 主分类号 H01L21/268
代理机构 代理人
主权项
地址