| 摘要 |
<p>The present invention is related to a method for irradiating semiconductor material comprising: irradiating a region of a semiconductor material layer surface with a first laser having laser irradiation parameters to melt at least a part of the region; and controlling the irradiation process by adapting the irradiation parameters; characterized in that the method further comprises determining the depth of the melted region part. Further, the present invention is related to an apparatus for irradiating semiconductor material comprising: a first laser for irradiating a region of a semiconductor layer surface to melt at least a part of the region, said laser having laser irradiation parameters; and a controller for controlling the irradiation process by adapting the laser irradiation parameters; characterized in that the apparatus further comprises means for determining the depth of the melted region part.</p> |
