| 摘要 |
1295452 Semi-conductor devices MATSUSHITA ELECTRONICS CORP 2 Oct 1969 [4 Oct 1968 (2)] 48441/69 Heading H1K A pressure sensitive transistor includes a rectifying emitter or collector junction formed between a thin metal film 12 and the base region 13, of semi-conductor material, the junction being formed at the bottom of a cavity formed in the base by etching, the metal film being formed by deposition through a window in an insulating layer 17 overlying the base region. The depth of the cavity may be more than 3000 Š, and under-etching of the layer 17, which may be of silicon dioxide, to an extent of more than 1000 Š, causes a gap 19 to be formed, which gap reduces reverse leakage current, increases emitter-base breakdown voltage, and reduces noise generation in the forward direction. The base region may be epitaxially deposited, and the metal film may be sputtered or vacuum evaporated molybdenum. Pressure may be applied via stylus 11. Reference has been directed by the Comptroller to Specification 1,265,017. |
