发明名称 |
Susceptor for vapor phase epitaxial growth device |
摘要 |
<p>There is provided a susceptor for a vapor phase epitaxial growth device, by which skidding at the time of loading a silicon wafer is prevented and the wafer can be loaded at a fixed position of the susceptor: wherein a ring-shaped groove having sloping planes widening toward a surface of the susceptor are formed on the outermost circumference of the bottom surface; and gas release openings penetrating through to the back surface of the susceptor are formed, each having a sectional area of 2.0 to 3.0mm 2 and a ratio of all opening areas is 0.25 to 0.5% on the bottom surface.</p> |
申请公布号 |
EP2103720(B1) |
申请公布日期 |
2012.03.21 |
申请号 |
EP20090001968 |
申请日期 |
2009.02.12 |
申请人 |
SUMCO CORPORATION;SUMCO TECHXIV CORPORATION |
发明人 |
FUJIKAWA, TAKASHI;ISHIBASHI, MASAYUKI;IRIGUCHI, KAZUHIRO;KAWANO, KOUHEI |
分类号 |
C30B25/18;C23C16/458 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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