<p>A JFET (100), which is a semiconductor device allowing for reduced manufacturing cost, includes: a silicon carbide substrate (1); an active layer (8) made of single-crystal silicon carbide and disposed on one main surface of the silicon carbide substrate (1); a source electrode (92) disposed on the active layer (8); and a drain electrode (93) formed on the active layer (8) and separated from the source electrode (92). The silicon carbide substrate (1) includes: a base layer (10) made of single-crystal silicon carbide, and a SiC layer (20) made of single-crystal silicon carbide and disposed on the base layer (10). The SiC layer (20) has a defect density smaller than that of the base layer (10).</p>
