发明名称 PHOTOVOLTAIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 <p>The method includes: steps of forming an n-type diffusion layer having an n-type impurity diffused thereon at a first surface side of a p-type silicon substrate; forming a reflection prevention film on the n-type diffusion layer; forming a back-surface passivation film made of an SiONH film on a second surface of the silicon substrate; forming a paste material containing silver in a front-surface electrode shape on the reflection prevention film; forming a front surface electrode that is contacted to the n-type diffusion layer by sintering the silicon substrate; forming a paste material containing a metal in a back-surface electrode shape on the back-surface passivation film; and forming a back surface electrode by melting a metal in the paste material by irradiating laser light onto a forming position of the back surface electrode and by solidifying the molten metal.</p>
申请公布号 EP2432024(A1) 申请公布日期 2012.03.21
申请号 EP20090843293 申请日期 2009.04.14
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 NAKATANI, MITSUNORI
分类号 H01L31/04;H01L31/0216;H01L31/0224;H01L31/028;H01L31/0368;H01L31/052;H01L31/068;H01L31/18 主分类号 H01L31/04
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