发明名称 |
Nonvolatile semiconductor storage device |
摘要 |
This invention has the purpose of providing a nonvolatile semiconductor storage device which is capable of entering multivalued storage in a FeFET unit without requiring preparation of a plurality of voltage sources. The nonvolatile semiconductor storage device is provided with multivalued ferroelectric memory cells which impart varied quantities of polarization to a ferroelectric material by applying pulse voltages having one and the same height and varied widths and consequently produce varied states of storage in conformity with the varied quantities of polarization. |
申请公布号 |
US8139388(B2) |
申请公布日期 |
2012.03.20 |
申请号 |
US20090565477 |
申请日期 |
2009.09.23 |
申请人 |
TAKAHASHI MITSUE;SAKAI SHIGEKI;WANG SHOUYU;TAKEUCHI KEN;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
TAKAHASHI MITSUE;SAKAI SHIGEKI;WANG SHOUYU;TAKEUCHI KEN |
分类号 |
G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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