A finFET structure includes a semiconductor fin located over a substrate. A gate electrode is located traversing the semiconductor fin. The gate electrode has a spacer layer located adjoining a sidewall thereof. The spacer layer does not cover completely a sidewall of the semiconductor fin. The gate electrode and the spacer layer may be formed using a vapor deposition method that provides for selective deposition upon a sidewall of a mandrel layer but not upon an adjoining surface of the substrate so that the spacer layer does not cover completely the sidewall of the semiconductor fin. Other microelectronic structures may be fabricated using the lateral growth methodology.
申请公布号
US8138100(B2)
申请公布日期
2012.03.20
申请号
US20080273908
申请日期
2008.11.19
申请人
FURUKAWA TOSHIHARU;HOLMES STEVEN J.;HORAK DAVID V.;KOBURGER, III CHARLES W.;INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
FURUKAWA TOSHIHARU;HOLMES STEVEN J.;HORAK DAVID V.;KOBURGER, III CHARLES W.