发明名称 |
Integrated circuit system with high voltage transistor and method of manufacture thereof |
摘要 |
A method of manufacture of an integrated circuit system includes: providing a semiconductor substrate having an active region, implanted with impurities of a first type at a first concentration; forming an isolation region around the active region; forming a parasitic transistor by applying a gate electrode, implanted with impurities of a second type at a second concentration, over the active region and the isolation region; and applying an isolation edge implant, with the impurities of the first type at a third concentration greater than or equal to the second concentration, for suppressing the parasitic transistor. |
申请公布号 |
US8138051(B2) |
申请公布日期 |
2012.03.20 |
申请号 |
US20090488451 |
申请日期 |
2009.06.19 |
申请人 |
DONG YEMIN;VERMA PURAKH RAJ;ZOU XIN;CHENG CHAO;CHU SHAO-FU SANFORD;GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
DONG YEMIN;VERMA PURAKH RAJ;ZOU XIN;CHENG CHAO;CHU SHAO-FU SANFORD |
分类号 |
H01L21/336;H01L29/76;H01L29/78;H01L29/94;H01L31/119 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|