发明名称 |
Semiconductor component and method of manufacture |
摘要 |
A semiconductor component that includes a Schottky device, an edge termination structure, a non-Schottky semiconductor device, combinations thereof and a method of manufacturing the semiconductor component. A semiconductor material includes a first epitaxial layer disposed on a semiconductor substrate and a second epitaxial layer disposed on the first epitaxial layer. The second epitaxial layer has a higher resistivity than the semiconductor substrate. A Schottky device and a non-Schottky semiconductor device are manufactured from the second epitaxial layer. In accordance with another embodiment, a semiconductor material includes an epitaxial layer disposed over a semiconductor substrate. The epitaxial layer has a higher resistivity than the semiconductor substrate. A doped region is formed in the epitaxial layer. A Schottky device and a non-Schottky semiconductor device are manufactured from the epitaxial layer. |
申请公布号 |
US8138033(B2) |
申请公布日期 |
2012.03.20 |
申请号 |
US20070746437 |
申请日期 |
2007.05.09 |
申请人 |
HOSSAIN ZIA;ROBB FRANCINE Y.;VENKATRAMAN PRASAD;SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC |
发明人 |
HOSSAIN ZIA;ROBB FRANCINE Y.;VENKATRAMAN PRASAD |
分类号 |
H01L21/44;H01L27/095;H01L29/76 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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