PURPOSE: A method for fabricating a solar cell is provided to maximize the power generation efficiency of a solar cell by minimizing the size of contact resistance. CONSTITUTION: A silicon substrate of a first conductivity type is prepared(S100). An impurity ion is implanted into an upper layer of a substrate(S110). A heavily doped region is formed in a semiconductor layer of a second conductivity type(S120). A mask pattern having an opening in the surface of substrate is formed(S130). A metallic member is spread on the substrate through a sputtering method and the metal layer is deposited(S140). A heat treatment of the metal layer is performed(S150). A silicide is formed on a high doped region(S160). A metal paste and electrode are formed in the silicide(S180).
申请公布号
KR20120026737(A)
申请公布日期
2012.03.20
申请号
KR20100088814
申请日期
2010.09.10
申请人
HYUNDAI HEAVY INDUSTRIES CO., LTD.
发明人
LEE, KYUNG WON;SONG, SEOK HYUN;YANG, SU MI;LEE, JIN SUP;SEO, JUN MO;SHIN, YANG SIK