发明名称 |
Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios |
摘要 |
The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, an inorganic halide salt, and an aqueous carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition exhibits selectivity for removal of silicon nitride over removal of silicon oxide and polysilicon. |
申请公布号 |
US8138091(B2) |
申请公布日期 |
2012.03.20 |
申请号 |
US20090384266 |
申请日期 |
2009.04.02 |
申请人 |
DYSARD JEFFREY M.;JOHNS TIMOTHY P.;CABOT MICROELECTRONICS CORPORATION |
发明人 |
DYSARD JEFFREY M.;JOHNS TIMOTHY P. |
分类号 |
H01L21/302;C23F1/00;H01L21/461 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|