| 摘要 |
An object of the present invention is to provide a semiconductor device having a structure which can realize not only suppressing a punch-through current but also reusing a silicon wafer which is used for bonding, in manufacturing a semiconductor device using an SOI technique, and a manufacturing method thereof. The semiconductor device can suppress the punch-through current by forming a semiconductor film in which an impurity imparting a conductivity type opposite to that of a source region and a drain region is implanted over a substrate having an insulating surface, and forming a channel formation region using a semiconductor film of stacked layers obtained by bonding a single crystal semiconductor film to the semiconductor film by an SOI technique. |
