发明名称 |
Metal high dielectric constant transistor with reverse-T gate |
摘要 |
A transistor is provided. The transistor includes a silicon layer including a source region and a drain region. A gate stack is disposed on the silicon layer between the source region and the drain region. The gate stack comprises a first layer of a high dielectric constant material, a second layer comprising a metal or metal alloy, and a third layer comprising silicon or polysilicon. A lateral extent of the second layer of the gate stack is substantially greater than a lateral extent of the third layer of the gate stack. Also provided are methods for fabricating such a transistor. |
申请公布号 |
US8138052(B2) |
申请公布日期 |
2012.03.20 |
申请号 |
US20090543726 |
申请日期 |
2009.08.19 |
申请人 |
CHANG LELAND;LAUER ISAAC;SLEIGHT JEFFREY W.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG LELAND;LAUER ISAAC;SLEIGHT JEFFREY W. |
分类号 |
H01L29/72 |
主分类号 |
H01L29/72 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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