发明名称 |
CMOS image sensor having a crosstalk prevention structure |
摘要 |
In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P+ type well layer is formed in the P type epitaxial layer. An N type deep guardring well is formed in a photodiode guardring region. The N type deep guardring region makes contact with the N type substrate and also be connected with an operational voltage terminal. A triple well is formed in a photodiode region and a peripheral circuit region. The triple well is used for forming a PMOS and an NMOS having different operational voltages. An isolation region is formed in the photodiode region. The isolation region in the photodiode region has a depth different from a depth of an isolation region in the peripheral circuit region. |
申请公布号 |
US8138530(B2) |
申请公布日期 |
2012.03.20 |
申请号 |
US20090482960 |
申请日期 |
2009.06.11 |
申请人 |
PARK WON-JE;PARK YOUNG-HOON;KIM UI-SIK;SEONG DAE-CHEOL;YOON YEO-JU;KEANG BO-BAE;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK WON-JE;PARK YOUNG-HOON;KIM UI-SIK;SEONG DAE-CHEOL;YOON YEO-JU;KEANG BO-BAE |
分类号 |
H01L31/062 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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