发明名称 Photoconductor structure processing methods and imaging device photoconductor structures
摘要 Photoconductor structure processing methods and imaging device photoconductor structures are described. According to one embodiment, a photoconductor structure processing method includes processing a photoconductor structure of an imaging device and wherein the photoconductor structure comprises charge transport material configured to conduct electrical charges generated responsive to reception of light to form a latent image during an electro-photographic imaging process, the processing comprising removing at least some of the charge transport material from at least a portion of the photoconductor structure. The photoconductor structure may also be further treated to reduce the migration of charge transport material. Additional embodiments are described in the disclosure.
申请公布号 US8137887(B2) 申请公布日期 2012.03.20
申请号 US20070823249 申请日期 2007.06.27
申请人 SHENG XIA;NG HOU T.;HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 SHENG XIA;NG HOU T.
分类号 G03G13/24 主分类号 G03G13/24
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