发明名称 Manufacturing method of semiconductor device having underfill resin formed without void between semiconductor chip and wiring board
摘要 A manufacturing method of a semiconductor device includes a film state underfill resin adhering step wherein film state underfill resin in a semi-cured state is adhered on the first surface of the board main body without forming a gap between the first surface of the board main body and the pad; a flattening step wherein an upper surface of the film state underfill resin is flattened; a chip connecting step wherein the semiconductor chip is pressed onto the upper surface of the film state underfill resin after the flattening step so that the semiconductor chip is flip chip connected to the pad; and an underfill resin forming step wherein the film state underfill resin is cured so that the underfill resin is formed between the semiconductor chip and the wiring board.
申请公布号 US8138018(B2) 申请公布日期 2012.03.20
申请号 US20090418637 申请日期 2009.04.06
申请人 OI KIYOSHI;KURIHARA TAKASHI;SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 OI KIYOSHI;KURIHARA TAKASHI
分类号 H01L21/00 主分类号 H01L21/00
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