| 摘要 |
<p>PURPOSE: A semiconductor device is provided to prevent leaked currents from first and second lines, thereby increasing reliability of the semiconductor device. CONSTITUTION: A semiconductor device has a first line(110a), a second line(110b), and a third line(111). The potential of the third line is lower than the potentials of the first and second lines. The third line is placed between the first and second lines. The first line and the third lines are electrically connected through a first transistor. The second and third lines are electrically connected through a second transistor to which a gate electrode layer and a source electrode layer are electrically connected. A consecutive oxide semiconductor film is formed on upper/lower parts of the first, second, and third lines. The consecutive oxide semiconductor film is used in semiconductor areas of the first and second transistors.</p> |
