发明名称 METHOD FOR ELECTROMAGNETIC CASTING OF SILICON INGOT
摘要 PURPOSE: A method for electromagnetic casting of a silicon ingot is provided to increase concentration of oxygen and carbon in molten silicon by maintaining the pressure of the chamber lower pressure than normal pressure. CONSTITUTION: An inert gas inlet hole(5) guides an inert gas to a chamber. An inert gas guide tube is contacted to the inert gas inlet hole. A discharge pipe(16) is connected to the chamber to discharge ambient gas from the chamber. A pressure adjustment valve(19) is arranged between a discharge pipe and a vacuum pump(18). The pressure within the chamber is controlled by controlling the discharge amount of the ambient gas.
申请公布号 KR20120026431(A) 申请公布日期 2012.03.19
申请号 KR20100128863 申请日期 2010.12.16
申请人 SUMCO CORPORATION 发明人 NAITOU NOBUMASA;MIYAMOTO SHINICHI;KOYA HIROSHI
分类号 C30B29/06;C01B33/021;C30B11/00;H01L21/02 主分类号 C30B29/06
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