SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor storage device and a method of manufacturing the same are provided to improve the high integration of a device by installing the dummy hole close to a pillar member and securing the minimum distance between a dummy hole and a contact. CONSTITUTION: A silicon oxide film(13) is formed on a silicon substrate(11). An electrode film(18) and an insulating film(19) are formed in a silicon oxide film alternately to form laminate. A contact(45) is contacted to an electrode layer from the end of the laminate. A semiconductor device penetrates through the laminate to laminating direction. A charge storing layer is formed between an electrode film and the semiconductor member.