发明名称 |
SCHOTTKY DIODE SWITCH AND MEMORY UNITS CONTAINING THE SAME |
摘要 |
<p>A switching element that includes a first semiconductor layer, the first semiconductor layer having a first portion and a second portion; a second semiconductor layer, the second semiconductor layer having a first portion and a second portion; an insulating layer disposed between the first semiconductor layer and the second semiconductor layer; a first metal contact in contact with the first portion of the first semiconductor layer forming a first junction and in contact with the first portion of the second semiconductor layer forming a second junction; a second metal contact in contact with the second portion of the first semiconductor layer forming a third junction and in contact with the second portion of the second semiconductor layer forming a fourth junction, wherein the first junction and the fourth junction are Schottky contacts, and the second junction and the third junction are ohmic contacts.</p> |
申请公布号 |
KR20120026634(A) |
申请公布日期 |
2012.03.19 |
申请号 |
KR20127003805 |
申请日期 |
2010.07.09 |
申请人 |
SEAGATE TECHNOLOGY LLC |
发明人 |
KIM, YOUNG;NURUL AMIN;DADI SETIADI;VENUGOPALAN VAITHYANATHAN;WEI TIAN;JIN, IN SIK |
分类号 |
H01L29/872;H01L21/8247;H01L27/115 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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