| 摘要 |
PURPOSE: A light emitting device is provided to increase an effective radiation area by controlling the thickness of a conductive substrate and maintain current dispersion performance. CONSTITUTION: A semiconductor light emitting device(100) includes a conductive substrate, an n-type semiconductor layer, a p-type semiconductor layer, an active layer, an N type electrode, and a P-contact. The n-type semiconductor layer is formed on a first plane of the conductive substrate(140), and the p-type semiconductor layer is formed on the n-type semiconductor layer. An active layer is formed between the n-type semiconductor layer and p-type semiconductor layer. The n-type electrode is formed in the second face faced with the first plane of the conductive substrate. |
