FABRICATION METHOD OF HIGH EFFICIENCY MULTIPLE JUNCTION SOLAR CELL USING II-VI COMPOUND SEMICONDUCTOR LAYERS

摘要

PURPOSE: A method for manufacturing a multiple junction high efficient solar cell which uses an II-VI group compound semiconductor is provided to reduce manufacturing costs by efficiently absorbing light in the full spectrum domain of sunlight without using materials including indiem. CONSTITUTION: An II-VI group compound semiconductor thin film is grown up on the top of a GaSb substrate. The II-VI group compound semiconductor thin film does not include indium. A stibium molecular beam is irradiated on the surface of the GaSb substrate. The irradiation amount of the stibium molecular beam maintains molecular beam equivalent pressure of .5x10-7 Torr to 5.5x10-7 Torr at 500°C-600°C.