| 摘要 |
PURPOSE: A semiconductor apparatus driving method is provided to confirm a normal potential state of a floating gate corresponding to recorded data by detecting potential of a bit line while performing a recording process without a recording verification process. CONSTITUTION: First to m-th memory cells are connected between a source line and a bit line in series. A gate terminal of a first selection transistor is electrically connected to a first selection line. A gate terminal of a second selection transistor is electrically connected to a second selection line. The first to m-th memory cells respectively include a first transistor(160), a second transistor(162), and a capacitive device(164). The second transistor comprises an oxide semiconductor layer, a second drain terminal, a second source terminal, and a second gate terminal electrically connected to a second signal line. One side terminal of the capacitive device is electrically connected to a word line among m word lines.
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