发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat treatment time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides of one active layer and crystallization is made. A boundary portion where crystal growth from one catalytic element introduction region meets crystal growth from the other catalytic element introduction region is formed in a region which becomes a source region or drain region. |
申请公布号 |
US2012062809(A1) |
申请公布日期 |
2012.03.15 |
申请号 |
US201113233120 |
申请日期 |
2011.09.15 |
申请人 |
KOKUBO CHIHO;YAMAGATA HIROKAZU;YAMAZAKI SHUNPEI;SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KOKUBO CHIHO;YAMAGATA HIROKAZU;YAMAZAKI SHUNPEI |
分类号 |
G02F1/133;G02F1/1362;G09G3/30;G09G3/32;G09G3/36;H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/04;H01L29/786 |
主分类号 |
G02F1/133 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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