?-SIALON, LIGHT-EMITTING DEVICE AND ?-SIALON PRODUCTION METHOD

摘要

Provided are ß-sialon capable of achieving high emission peak intensity, a light-emitting device and ß-sialon production method. The ß-sialon is obtained by solid solution of Eu in ß-sialon represented by Si6-zAlzOzN8-z, and the variation coefficient of the characteristic X-ray intensity distribution for Al is 26% or less. The method comprises a baking process of blending an oxide with silicon nitride and aluminum nitride, then adding a europium compound and heating under a nitrogen atmosphere; a grinding process of grinding the baked product obtained; an annealing process of heating the ground baked product in a noble gas atmosphere or in a vacuum; an acid treatment process of treating the annealed, ground, baked product with acid; and an elutriation process of removing fine powder; to produce ß-sialon with a variation coefficient of the characteristic X-ray intensity distribution for Al of 26% or less.