MANUFACTURING METHOD OF EPITAXIAL WAFER, AND EPITAXIAL GROWTH APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of an epitaxial wafer and an epitaxial growth apparatus for forming an epitaxial film with uniform thickness by eliminating the deviation in film thickness distribution.

SOLUTION: In a manufacturing method of an epitaxial wafer for forming an epitaxial film on a main plane of a substrate disposed on a substrate mount stage by rotating the substrate mount stage and the substrate and feeding a material gas onto the main plane of the substrate, the epitaxial film is formed while changing the film thickness control parameter in accordance with the position of the substrate mount stage in a rotation direction.

COPYRIGHT: (C)2012,JPO&INPIT