发明名称 |
Semiconductor Memory Device And Method Of Forming The Same |
摘要 |
Semiconductor memory devices and methods of forming semiconductor memory devices are provided. The methods may include forming insulation layers and cell gate layers that are alternately stacked on a substrate, forming an opening by successively patterning through the cell gate layers and the insulation layers, and forming selectively conductive barriers on sidewalls of the cell gate layers in the opening. |
申请公布号 |
US2012064681(A1) |
申请公布日期 |
2012.03.15 |
申请号 |
US201113299855 |
申请日期 |
2011.11.18 |
申请人 |
KIM JINGYUN;LEE MYOUNGBUM;HWANG KIHYUN |
发明人 |
KIM JINGYUN;LEE MYOUNGBUM;HWANG KIHYUN |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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