| 摘要 |
<p>Provided is a plasma processing apparatus, which can generate plasma at a higher density than the densities at which plasma is generated by plasma processing apparatuses employing external antenna systems, and which can suppress mixing of impurities in a subject to be processed, and generation of particles, said mixing of impurities and generation of particles being problems of plasma processing apparatuses employing internal antenna systems. This plasma processing apparatus has: a vacuum container (11) composed of a metal; an antenna disposed section (14) having a high frequency antenna (18) disposed inside of a through hole (cavity), which is provided in the upper wall (112) of the vacuum container (11); and a partitioning plate (15), which is composed of a dielectric material, and which covers the whole inner surface (1121) of the upper wall (112). In this plasma processing apparatus, since a step is prevented from being generated between the inner surface (1121) and the partitioning plate (15) by covering the whole inner surface (1121) side of the upper wall (112) with the partitioning plate (15), particles are prevented from being generated due to generation of adhered material on a step portion.</p> |
