| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a first epitaxial layer on a semiconductor substrate, and forming a plurality of isolation regions by etching the layer. <P>SOLUTION: The method comprises a step of forming a second epitaxial layer 106b on an etched first epitaxial layer 106a. The layers 106a and 106b comprise at least of one group III nitride, and form one buffer 106 together. The method also comprises: a step of forming a device layer 108 on the buffer layer and a step of manufacturing a semiconductor device by using the device layer. The layer 106b can enclose a region 106b substantially existing only on the region 106a. The layer 106b can cover the region 106a and the substrate, and the layer 106b is etched or not etched. The device layer 106b can be formed during the same operation as that of usage of the device layer for forming the layer 106b. <P>COPYRIGHT: (C)2012,JPO&INPIT |
